lstrom7929 lstrom7929

24-04-2024
Physics

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A pnp Si bipolar junction transistor (BJT) with the base width of 3 um has the approximate current gain B of 180. Assume that the diffusion coefficient of the holes in the base is 10. Give the circuit symbol of pnp BJT, and find the life-time of the holes in the base if the emitter injection efficiency is close to unity.

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